Optical properties of pyrolytic Silicon Nitride SiNx enriched with silicon

نویسندگان

چکیده

Non-stoichiometric silicon nitride SiN x , enriched with silicon, is a promising material for the non-volatile resistive memory development. The current studies devoted to investigation of optical properties synthesized in low-pressure reactor at 800 o C different ratios dichlorosilane (SiH 2 Cl ) ammonia (NH 3 ). It was found that films SiH /NH =1/1, 1/2 and 1/3, corresponding bandgap values are 3.83, 4.17 4.40 eV. At same time, parameter x, according theoretical dependence value on calculated from first principles, 1.26, 1.30 1.32. Thus, by increasing ratio, it possible create non-stoichiometric controlled enrichment degree high uniformity chemical composition thickness. Keywords: nitride, memristor, absorption coefficient, ellipsometry, quantum modeling.

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ژورنال

عنوان ژورنال: Optics and Spectroscopy

سال: 2022

ISSN: ['0030-400X', '1562-6911']

DOI: https://doi.org/10.21883/eos.2022.11.55105.3834-22